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一、前言当前,随着硅平面器件和大规模集成电路的不断深入和发展,对SiO_2保护膜的质量提出更高的要求。如:CCD 和 MOS 电路都要求有低的表面态密度,以获得高的传输效率和低的阈值电压及稳定性
I. Preface At present, with the continuous development of silicon planar devices and large-scale integrated circuits, the quality of SiO 2 protective film is put forward higher requirements. Such as: CCD and MOS circuits require low surface state density in order to obtain high transmission efficiency and low threshold voltage and stability