近年来,真空微空电子学的发展特别引人瞩目。真空微电子器件结合了电子的真空输运及大规模集成的微细加工技术,有着广阔的应用前景。该类器件要在适中的电压下工作,需要约1×10~7V/cm的强电场,为此,要制备出尖端阴极,以使局部电场集中。显见,阴极制备就成为真空微电子器件的关键工艺之一。早在1968年spindt就用蒸发钼的方法形成尖端阴极,后来又进行了改进。该方法在 In recent years, the development of vacuum electronics has drawn special attention. Vacuum microelectronic devices combine the electronic vacuum transport and large-scale integration of micro-processing technology, has a broad application prospects. Such devices to work under moderate voltage, requires a strong electric field of about 1 × 10 ~ 7V / cm, for which, to be the tip of the cathode to make the local electric field concentration. Obviously, cathode preparation has become one of the key processes of vacuum microelectronic devices. As early as 1968, spindt used the method of evaporating molybdenum to form the tip cathode, which was later improved. The method is