In this work,we use a 3-nm-thick A10.64In0.36N back-barrier layer in In0.17A10.83N/GaN high-electron mobility transistor (HEMT) to enhance electron confinement.
The microstructures of titanium (Ti), an attractive tritium (T) storage material, will affect the evolution process of the retained helium (He). Understanding t
The influences of the spacer-layer Ta on the structures and magnetic properties of NdFeB/NdCeFeB multilayer films are investigated via DC sputtering under an Ar