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本文介绍了一种简而易行精确控制少子寿命的新技术——高能12MeV电子辐照技术的原理、方法、特点及在硅功率开关二极管中的应用。实验研究结果表明:用12MeV电子辐照硅器件,少子寿命可得到精确地控制,硅功率开关二极管的V_f～T_(RR)协调关系、高温性能优于扩金工艺,器件参数一致性、重复性好、性能稳定,完全可以取代扩金、扩铂等工艺。
This paper presents a new and easy method to precisely control the life of a young child - the principle, method, features and application of high energy 12MeV electron irradiation technology in silicon power switching diodes. The experimental results show that the lifetime of minority carrier can be precisely controlled by using 12MeV electron irradiation silicon device, the coordination relationship of V_f ~ T_ (RR) of silicon power switching diode is better than that of the gold doping process, the device parameters are consistent and repeatability Good, stable performance, can replace the gold, platinum expansion process.