本文报道了用ＭＢＥ－ＳＰＭ联合系统对ＩｎＡｓ／ＧａＡｓ量子点进行准原位研究的初步结果．ＳＴＭ图像表明，在对ｎ＋－ＧａＡｓ衬底进行脱氧处理后，通过生长ＧａＡｓ缓冲层能有效的改善表面质量．在缓冲层上继续生长２单原子层ＩｎＡｓ后形成了量子点．ＳＰＭ与透射电子显微镜给出的量子点形貌的异同在文中也给出了合理的解释，该研究工作的进一步深入将对自组织生长量子点的生长机理的理解和样品质量的提高有重要意义． This paper reports the preliminary results of a quasi-in-situ study of InAs / GaAs QDs using the MBE-SPM system. The STM images show that by de-oxygenating the n + -GaAs substrate, surface quality can be effectively improved by growing a GaAs buffer layer. Quantum dots were formed after continued growth of 2 single atomic layer InAs on the buffer layer. The similarities and differences between the quantum dot topography and the quantum dot topography given by SPM and TEM are also given in this paper. The further study of this work will be of great significance for the understanding of the growth mechanism of self-organized growth quantum dots and the improvement of sample quality .