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采用射频磁控溅射法在Si(111)衬底上制备多组分掺杂ZnO薄膜,研究了衬底温度和氧分压对Bi、Cr、Sb、Mn和Co掺杂ZnO薄膜的晶体结构、表面形貌及电学性能的影响。结果表明:随着衬底温度的升高,ZnO(002)衍射峰相对强度先增强后减弱;薄膜表面粗糙度先减小后增大。随着氧分压的增大,ZnO的(101)、(102)和(103)衍射峰消失,薄膜呈优异的(002)择优取向生长。在衬底温度为300℃、氧分压为50%时,Bi、Cr、Sb、Mn和Co所引起的缺陷和氧过剩引起的本征缺陷,共同形成受主态的复合缺陷,导致晶界势垒激增。此时,薄膜有最优化的压敏电压、非线性常数和漏电流,分别达到7.05V、20.83和0.58μA/mm~2。
The multi-component doped ZnO thin films were prepared by RF magnetron sputtering on Si (111) substrates. The effects of substrate temperature and oxygen partial pressure on the crystal structures of Bi, Cr, Sb, Mn and Co- , Surface morphology and electrical properties. The results show that the relative intensity of the diffraction peak of ZnO (002) first increases and then decreases with the increase of the substrate temperature. The surface roughness of the ZnO film decreases first and then increases. With the increase of partial pressure of oxygen, the diffraction peaks of (101), (102) and (103) disappeared and the films showed excellent (002) preferred orientation. When the substrate temperature is 300 ℃ and the oxygen partial pressure is 50%, the defects caused by Bi, Cr, Sb, Mn and Co and the intrinsic defects caused by oxygen excess form the composite defects in the acceptor state, Potential surge. At this point, the film has the most optimized voltage-dependent voltage, non-linear constant and leakage current, respectively 7.05V, 20.83 and 0.58μA / mm ~ 2.