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开展了一种基于MEMS工艺的微波/毫米波薄膜负载电阻的结构设计和工艺实现,该负载电阻选择TaN作为薄膜材料,高阻硅为基底材料,仿真设计并优化了三种新型结构,给出了一套MEMS TaN薄膜负载电阻制备的工艺流程,并针对该工艺流程方案进行了关键参数的工艺误差仿真,实现了适用于20～40 GHz频率内的三种MEMS TaN薄膜负载电阻的工艺制作和测试.测试结果表明,结构一、结构二和结构三的回波损耗分别小于-22,-18和-18.5 dB,并将结构一成功运用于32～34 GHz毫米波频段内的MEMS隔离器,MEMS隔离器的隔离度大于25 dB,插入损耗小于0.5 dB.MEMS TaN薄膜负载电阻具有很好的负载吸收功能,适合微波/毫米波通信发展需求.“,”The structure design and fabrication of a thin film mircowave/millimeter-wave load resistor based on the micro-electromechanical system (MEMS) process were carried out.The load resistor was fabricated with the TaN thin film as thin film material and the high-resistance silicon as substrate material.Three new structures were simulated,designed and optimized.A fabrication process scheme of the MEMS TaN thin film load resistor was presented.The error simulation of the key process parameters for the fabrication process scheme was conducted.Three MEMS TaN thin film load resistors used for 20-40 GHz were fabricated and tested.The test results show that the return losses of the structure 1,structure 2 and structure 3 are less than -22,-18 and-18.5 dB,respectively.And the structure 1 was successfully applied to the MEMS isolator in 32-34 GHz millimeter-wave band.The isolation of the MEMS isolator is greater than 25 dB and the insertion loss is less than 0.5 dB.The MEMS TaN thin film load resistor has an excellent load power absorption function,meeting the development requirements of the mircowave/millimeter-wave communication.