论文部分内容阅读
第三届全国半导体物理会议于1981年12月15日至19日在江苏省无锡市召开.出席这次会议的有领导部门、高等院校、研究所、工厂等66个单位的133名代表.大会共收到论文摘要180余篇,报告内容涉及电子态、表面、界面、输运现象、深能级杂质和缺陷、非晶态、半导体光学性质、器件物理、离子注入、激光退火和辐射效应等. 代表们认为,这次会议和第二届会议比较,有以下几个特点.表现在,半导体物理的研究面比以前
The Third National Semiconductor Physics Conference was held in Wuxi, Jiangsu Province from December 15 to December 1981. 133 delegates from 66 units including leaders, institutions of higher learning, research institutes and factories attended the conference. The conference has received more than 180 abstracts, covering electronic states, surfaces, interfaces, transport phenomena, deep level impurities and defects, amorphous, semiconducting optical properties, device physics, ion implantation, laser annealing and radiation effects Etc. The delegates think that this conference has the following characteristics in comparison with the second session: In the study of semiconductor physics,