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用过冷法在632—630℃生长了掺Zn的p型Ga_(0.47)In_(0.53)As接触层。研究了液相中Ga组分和Zn组分对Ga_xIn_(1-x)As/InP异质结晶格失配的影响,用一次外延技术生长了Ga_xIn_(1-x)As作接触层的GaInAsP/InP双异质结。
The Zn-doped p-type Ga_ (0.47) In_ (0.53) As contact layer was grown at 632-630 ℃ by supercooling. The effects of Ga and Zn components on the lattice mismatch of Ga_xIn_ (1-x) As / InP heterojunction in liquid phase were studied. GaInAsP / InP double heterojunction.