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Ⅲ-Ⅴ族化合物半导体具有迁移率高、有效质量小等优点,因此它们的氧化膜及其界面性质的研究就成为当前研究的重要课题之一.它将为微波MOS场效应晶体管向毫米波段发展,为低功耗超高速逻辑集成电路研制开拓新的途径.现在制备的氧化膜大体上可分为本体氧化膜和复合氧化膜两大类.对
III-V compound semiconductors have the advantages of high mobility and low effective mass, so the study of their oxide films and their interfacial properties has become one of the most important topics in current research.It will develop the microwave MOS field effect transistor to the millimeter-wave band , For the development of low-power ultra-high-speed logic integrated circuits to explore new ways now prepared oxide film can be divided into bulk oxide film and composite oxide film two categories.