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In this study, we propose and demonstrate a broadband polarization-independent terahertz modulator based on graphene/silicon hybrid structure through a combination of continuous wave optical illumination and electrical gating.Under a pump power of 400 mW and the voltages ranging from-1.8 V to 1.4 V, modulation depths in a range of-23%–62% are achieved in a frequency range from 0.25 THz to 0.65 THz. The modulator is also found to have a transition from unidirectional modulation to bidirectional modulation with the increase of pump power. Combining the Raman spectra and Schottky current–voltage characteristics of the device, it is found that the large amplitude modulation is ascribed to the electric-field controlled carrier concentration in silicon with assistance of the graphene electrode and Schottky junction.
In this study, we propose and demonstrate a broadband polarization-independent terahertz modulator based on graphene / silicon hybrid structure through a combination of continuous wave optical illumination and electrical gating. Unit a pump power of 400 mW and the voltages ranging from-1.8 V to 1.4 V, modulation depths in a range of -23% -62% are achieved in a frequency range from 0.25 THz to 0.65 THz. The modulator is also found to have a transition from unidirectional modulation to bidirectional modulation with the increase of pump power. Combining the Raman spectra and Schottky current-voltage characteristics of the device, it is found that the large amplitude modulation is ascribed to the electric-field controlled carrier concentration in silicon with assistance of the graphene electrode and Schottky junction.