提出一种改进了的计算衬底非均匀掺杂ＭＯＳ器件开启电压的算法。这种算法对增强 （Ｅ－）和耗尽（Ｄ－）型 ＭＯＳ器件都适用，且避免了对泊松方程的严格数值求解。所需 计算时间短，而精度足以满足计算机工艺模拟的一需要。本算法巳在ＳＵＰＲＥＭ－Ⅲ中实 现，取代了原程序中不正确的部分。模拟和测试结果相比较得到的一致性证实了该算法 是有效的。本文还对算法的理论基础进行了讨论。 An improved algorithm for calculating the turn-on voltage of non-uniform doped MOS devices is proposed. This algorithm works well for both enhanced (E-) and depletion (D-) MOS devices and avoids the rigorous numerical solution to Poisson’s equations. The required calculation time is short, but the accuracy is enough to meet the needs of computer simulation. This algorithm has been implemented in SUPREM-III, replacing the incorrect part of the original program. The agreement between simulation results and test results proves that this algorithm is effective. This article also discusses the theoretical basis of the algorithm.