La-doped and undoped xBHnO_3-(1-x)PbTiO_3(BI-PT) thin films are deposited on(101)SrRuO_3/(100)Pt/(100)MgO substrates by the rf-magnetron sputtering method.The structures of the films are characterized by XRD and SEM,and the results indicate that the thin films are grown with mainly(100) oriented and columnar structures.The ferroelectricity and piezoelectricity of the BI-PT Ghns are also measured,and the measured results illustrate that both performances are effectively improved by the La-doping with suitable concentrations.These results will open up wide potential applications of the flims in electronic devices. La-doped and undoped xBHnO_3- (1-x) PbTiO_3 (BI-PT) thin films are deposited on (101) SrRuO_3 / (100) Pt / (100) MgO substrates by the rf-magnetron sputtering method. The structures of the films are characterized by XRD and SEM, and the results that that thin films are grown with mainly (100) oriented and columnar structures. ferroelectricity and piezoelectricity of the BI-PT Ghns are also measured, and the measured results illustrate that both both performances are effectively improved by the La-doping with suitable concentrations. these results will open up wide potential applications of the flims in electronic devices.