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一、玻璃钝化复合晶体管的方法 为了提高汽车电子点火装置的可靠性,复合晶体管一般采用单片式结构。我们采用Al-SiO_2膜保护,利用氢氟酸-发烟硝酸-冰乙酸组成的混合酸腐蚀挖槽,使电阻条及管芯四周台面同时形成,图1,图2分别为玻璃钝化复合晶体管管芯的平面图和剖面图。这种管子集电结结深为50～60μm,刻蚀出的台面沟槽深为70～80μm,在这个台面沟槽表面用电泳法被覆玻璃粉,然后经过熔凝制成玻璃钝化膜。
First, the method of glass passivation compound transistor In order to improve the reliability of automotive electronic ignition device, the composite transistor generally uses a monolithic structure. We use Al-SiO 2 film protection, using hydrofluoric acid - fuming nitric acid - glacial acetic acid composed of mixed acid etching groove, the resistor strip and the die around the mesa formed at the same time, Figure 1 and Figure 2 are glass passivation composite transistor Plan and section of die. This tube collector junction depth of 50 ~ 60μm, etched out of the trench trench is deep 70 ~ 80μm, in this mesa trench surface by electrophoresis coated glass powder, and then through the melting of the glass passivation film.