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Dielectric properties of Ag(Nb 1-x Ta x )O 3 and Bi 2 O 3 doped Ag(Nb 1-x Ta x )O 3 solid solutions were investigated.The results show that with the increase of Ta content(x),the sintering temperature increased, and the dielectric loss(tanδ)and the temperature coefficient(α c )decreased.Ag(Nb 1-x Ta x )O 3 (x=0.4)ceramics sintered at 1 100℃had the highest permittivity(516.8)and a lower tanδ(0.0021)at 1 MHz,and its temperature coefficient was about 191 ppm/℃.The sintering temperature of Ag(Nb 1-x Ta x )O 3 (x=0.4)was lowered by the addition of Bi 2 O 3 ,and its dielectric properties were improved.Ag(Nb 0.6 Ta 0.4 )O 3 ceramics with 2.5 wt%Bi 2 O 3 addition presented the optimum dielectric properties(ε=566,tanδ=0.0007 andα c ≈0ppm/℃)(1 MHz).
Dielectric properties of Ag (Nb 1-x Ta x) O 3 and Bi 2 O 3 doped Ag (Nb 1-x Ta x) O 3 solid solutions were investigated. The results show that with the increase of Ta content (x), (Nb 1-x Ta x) O 3 (x = 0.4) ceramics sintered at 1 100 ℃ had the highest permittivity (516.8 ) and a lower tan δ (0.0021) at 1 MHz, and its temperature coefficient was about 191 ppm / ° C. The sintering temperature of Ag (Nb 1-x Ta x) O 3 (x = 0.4) 2O 3, and its dielectric properties were improved. Ag (Nb 0.6 Ta 0.4) O 3 ceramics with 2.5 wt% Bi 2 O 3 addition presented the optimum dielectric properties (ε = 566, tan δ = 0.0007 and α c ≈0 ppm / (1 MHz).