制作了含自组织量子点的金属 半导体 金属双肖特基势垒器件 ,研究了器件的电流输运特性 .在量子点充放电造成的电流迟滞回路的基础上 ,观察到了电压扫描过程中的电流由低态到高态的跳跃现象 .这种电流跳跃来源于充电量子点的关联放电效应 .根据量子点系统的哈密顿量 ,分析了充电量子点关联放电的原因 .这种关联放电效应起源于量子点与 2DEG的相互作用 ,当一个量子点放电时通过量子点和 2DEG电流的变化会影响其他的量子点 ,从而促使其放电 ,这种过程在整个系统中放大导致所有的量子点放电 A metal-semiconductor double Schottky barrier device containing self-organized quantum dots is fabricated and the current transport characteristics of the device are investigated. Based on the current hysteresis loop caused by the charge and discharge of the quantum dot, the current during the voltage scan is observed The jump from low state to high state is derived from the related discharge effect of the charged quantum dots.The reason for the associated discharge of the charged quantum dots is analyzed according to the Hamiltonian of the quantum dot system.The correlation discharge effect originates in Quantum dots interact with 2DEG. When a quantum dot is discharged, changes through the quantum dots and 2DEG current affect other quantum dots, causing them to discharge. This process amplifies all the quantum dots throughout the system