论文部分内容阅读
报道了锰钴镍铜氧薄膜(Mn1.56Co0.96-xNi0.48CuxO4,MCNC,x=0,0.08,0.16,0.24)的红外探测器件的制备过程及器件性能。通过改变掺杂Cu的比例,制作了系列MCNC薄膜材料及红外探测器件。实验结果表明,对于一定厚度及尺寸的薄膜器件,铜的掺入能显著减小器件的阻值及器件噪声,弥补了负温度系数的减小的缺点。器件时间常数约为20~40ms。掺铜量为0.24的薄膜器件的探测率为0.83×107cm·Hz1/2W-1,相比同样规格的锰钴镍器件提高了约130%。此外,对于MCNC薄膜器件的老化现象进行了初步探讨。
The preparation and performance of infrared detection devices of Mn-Co-Ni-Cu thin films (Mn1.56Co0.96-xNi0.48CuxO4, MCNC, x = 0,0.08,0.16,0.24) are reported. By changing the proportion of doped Cu, a series of MCNC thin film materials and infrared detectors were fabricated. The experimental results show that for a certain thickness and size of thin film devices, the incorporation of copper can significantly reduce the device resistance and device noise, to make up for the negative temperature coefficient of the shortcomings. Device time constant is about 20 ~ 40ms. The detection rate of thin film devices with copper content of 0.24 was 0.83 × 107cm · Hz1 / 2W-1, which was about 130% higher than the same size of manganese-cobalt-nickel devices. In addition, the phenomenon of aging of MCNC thin film devices is discussed.