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用ZnS量子点与poly-4-vinyl-phenol(PVP)复合,通过简单的旋涂法制备了结构为ITO/ZnS∶PVP/Al的一次写入多次读取(WORM)的有机双稳态器件。器件起始状态为OFF态,通过正向电压的作用,器件由OFF态转变为ON态,并且在正向或反向电压的作用下,器件始终保持在ON态,表现出良好的一次写入多次读取的存储特性。与不含ZnS量子点的器件相比,含有ZnS量子点的器件表现出明显的双稳态特性,其电流开关比达到104,这说明ZnS量子点在器件中起到存储介质的作用。通过对器件电流-电压(I-V)特性的测试,详细讨论了器件的双稳态特性以及载流子传输机制,并且用不同的传导理论模型分析了器件在ON态和OFF态的电流传导机制。器件I-t曲线表明器件在大气环境中具有良好的永久保持特性。
An organic write-once (WORM) organic bistable structure of ITO / ZnS: PVP / Al was prepared by a simple spin-coating method by compounding ZnS quantum dots with poly-4-vinyl-phenol (PVP) Device. The initial state of the device is OFF state, through the role of the forward voltage, the device changes from OFF state to ON state, and in the forward or reverse voltage, the device remains in the ON state, showing a good write Multi-read storage characteristics. Compared with devices without ZnS quantum dots, devices containing ZnS quantum dots showed obvious bistability with a current switching ratio of 104, indicating that ZnS quantum dots play the role of storage medium in the device. By testing the current-voltage (I-V) characteristics of the device, the bistable characteristics of the device and the carrier transport mechanism are discussed in detail. The current conduction mechanism of the device in the ON state and the OFF state is analyzed by using different conduction theory models. The device I-t curve shows that the device has good permanent retention characteristics in the atmosphere.