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采用ＯＭＡ－４０００测量了ＳｉＨ_４射频辉光放电等离子体的光发射谱，研究了其谱线强度随放电射频功率和反应气体流量间的变化关系。结果表明：在放电射频功率增加和反应气体流量升高的过程中。其等离子体状态分别发生了性质不同的转变，这种转变联系到射频功率耗散机制的变化。当反应气体流量增加时，电子获得能量的机制由阴极暗区加速转变为等离子体内电场的加热效应；而在放电功率升高的过程中，离子轰击阴极产生的二次电子发射效应导致了光发射谱强度急剧增强的转变。
The optical emission spectrum of SiH_4 RF glow discharge plasma was measured by OMA-4000, and the relationship between the line intensity and discharge radio frequency power and reactant gas flow rate was studied. The results show that during the discharge RF power increases and the reaction gas flow rate increases. Their plasma states undergo a qualitatively different transition, which is linked to changes in the RF power dissipation mechanism. When the reaction gas flow rate increases, the electron energy gain mechanism is accelerated from dark cathode region to plasma electric field heating effect; and in the discharge power is increased, the ion bombardment of the cathode secondary electron emission effect led to light emission The sharp increase in spectral intensity.