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采用0.18μm CMOS工艺设计并制作了一个2.4 GHz全集成CMOS Doherty功率放大器。着重考虑了片上螺旋电感的回流路径对电感模型的影响,并在设计中使用了一种新颖的螺旋电感版图结构来避免回流路径的影响。实测结果表明该功率放大器增益达到16dB,1dB压缩点为20.5dBm,峰值输出功率和对应功率附加效率分别为21.2dBm和20.4%,整个芯片面积为2.8mm×1.7mm。
A 2.4 GHz fully integrated CMOS Doherty power amplifier is designed and fabricated in a 0.18 μm CMOS process. The effect of the return path of the on-chip spiral inductor on the inductance model was emphasized, and a novel spiral inductor layout structure was used in the design to avoid the effect of the return path. The measured results show that the power amplifier gain of 16dB, 1dB compression point of 20.5dBm, the peak output power and the corresponding additional power efficiency of 21.2dBm and 20.4% respectively, the entire chip area of 2.8mm × 1.7mm.