GaAs (001) substrates are patteed by electron beam lithography and wet chemical etching to control the nucleation of lnAs quantum dots (QDs). InAs dots are grown on the stripe-patteed substrates by solid source molecular beam epitaxy. A thick buffer layer is deposited on the strip patte before the deposition of InAs. To enhance the surface diffusion length of the In atoms, InAs is deposited with low growth rate and low As pressure.The AFM images show that distinct one-dimensionally ordered InAs QDs with homogeneous size distribution are created, and the QDs preferentially nucleate along the trench. With the increasing amount of deposited InAs and the spacing of the trenches, a number of QDs are formed beside the trenches. The distribution of additional QDs is long-range ordered, always along the trenchs rather than across the spacing regions.