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三维微电极是一种具有空间结构优势、电化学性能比二维微电极更加优越的微型储能结构.本文提出一种基于光刻、感应耦合等离子体刻蚀和溅射等MEMS工艺加工三维结构硅基微电极阵列的新方法.采用电化学阴极沉积工艺在微电极表面制备了纳米氧化钌功能薄膜.借助扫描电子显微镜、循环伏安测试和电化学交流阻抗谱测试等手段对三维微电极的表面形貌和电化学性能进行了表征,系统研究了阴极沉积电流密度、电沉积时间以及硅基微结构表面“微草效应”对三维微电极超电容特性的影响.所制备三维微电极的比电容达到1.57 F/cm2,与平面电极比电容0.42 F/cm2相比明显提高,而电化学阻抗比二维平面微电极显著降低.相关实验数据表明基于MEMS技术加工的三维结构微电极具有优于平面电极的电化学电容储能特性.
The three-dimensional microelectrode is a kind of miniature energy storage structure which has the advantages of space structure and electrochemical performance more superior than the two-dimensional microelectrode.This paper presents a three-dimensional structure based on MEMS technology of lithography, inductively coupled plasma etching and sputtering A new method of silicon-based microelectrode arrays was prepared by electrochemical cathodic deposition on the surface of microelectrode.With the help of scanning electron microscopy, cyclic voltammetry and electrochemical impedance spectroscopy, the three-dimensional microelectrode Surface morphology and electrochemical performance of the three-dimensional microelectrode were characterized, and the effects of cathodic deposition current density, electrodeposition time and surface micro-structure effect on the ultracapacitance of three-dimensional microelectrode were investigated systematically.The prepared three-dimensional microelectrode The specific capacitance is 1.57 F / cm2, which is significantly higher than that of the planar electrode at 0.42 F / cm2, while the electrochemical impedance is significantly lower than that of the 2D planar microelectrode.Experimental data show that the three-dimensional microelectrode based on MEMS technology has Better than the planar electrode electrochemical capacitor energy storage characteristics.