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在自动化领域中,估计功率分立器件的寿命值的工作十分受到重视。用户要求对器件寿命给予尽可能精确的表征,以保证满足他们的需要。本文指出:正确的寿命估计工作中应重视分析在器件施加功率期间,器件结温的变化。本文的目的,首先是对当前评估硅片中温度变化的各种方法进行简要的评述;然后针对如何能精确预估各种布局的异质结器件的真实温度分布状况提出一个新方法。新方法是在用户的EDA(电子设计自动化)流程的基础上,对分立功率器件经常处于的开通/关断工作条件,收集非常精确的热的有关信息。本文对ST微电子公司生产的功率MOSFET器件进行了深入的热研究。研究指出,器件的布局是如何影响有源区内的电流分布的。因此,以往采用的通过平均温度进行评估的方法是不合用了,因为该评估方法的结论仅取决于在器件引出端上所获取的电流数据和电压数据。
In the field of automation, the work of estimating the lifetime of power-split devices has received considerable attention. The user asks for the most accurate characterization of the device lifetime as possible to meet their needs. This paper points out that the correct lifetime estimation should pay attention to the analysis of changes in the device junction temperature during device power application. The purpose of this paper is to provide a brief review of various current methods for assessing temperature variations in silicon wafers. Then, a new method is proposed based on how to accurately predict the true temperature distribution of heterojunction devices in various layouts. The new method is based on the user’s EDA (Electronic Design Automation) process, based on the discrete power devices are often in the on / off working conditions, to collect very accurate information about the heat. This article has conducted in-depth thermal studies of power MOSFET devices produced by ST Microelectronics. The study pointed out how the layout of the device affects the current distribution in the active region. Therefore, the previously adopted method of evaluating the average temperature is not suitable because the conclusions of the evaluation method only depend on the current data and voltage data obtained at the device terminals.