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Ga2O3/ITO alternating multilayer films were deposited on quartz glass substrates by magnetron sputtering.The effect of the multi-period on the structural,optical and electrical properties of Ga2O3/ITO alternating multilayer films was investigated by an X-ray diffractometer,a double beam spectrophotometer and the Hall system,respectively.A low sheet resistance of 225.5Ω/□ and a high transmittance of more than 62.9% at a 300 nm wavelength were obtained for the two-period alternating multilayer film with a thickness of 72 nm.
Ga2O3 / ITO alternating multilayer films were deposited on quartz glass substrates by magnetron sputtering. The effect of the multi-period on the structural, optical and electrical properties of Ga2O3 / ITO alternating multilayer films was investigated by an X-ray diffractometer, a double beam spectrophotometer and the Hall system, respectively. A low sheet resistance of 225.5Ω / □ and a high transmittance of more than 62.9% at a 300 nm wavelength were obtained for the two-period alternating multilayer film with a thickness of 72 nm.