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日本富士通实验室研制了一种发射波长为1.3μm的BH激光器:V形槽衬底BH激光器(VSB)。在这种结构中,有源层埋在衬底上的V形槽内。为了制作这种激光器,研制出一种腐蚀方法,用这种方法在<011>方向上形成V形槽。25℃时CW阈值电流范围在10～20mA。一直到20mW/端面的光功率均可获得稳定的基横模激射。CW激射的最高温度为100℃。纵模是多模,然而其包络半最大点的全宽(FWHW)典型值低于3nm。动态特性呈现出
Fujitsu Laboratories Japan has developed a BH laser emitting a wavelength of 1.3μm: V-groove substrate BH laser (VSB). In this structure, the active layer is buried in V-grooves on the substrate. In order to make such a laser, an etching method was developed, by which a V-shaped groove was formed in the <011> direction. The CW threshold current range is between 10 and 20 mA at 25 ° C. Up to 20mW / end of the optical power can be obtained by the basic transverse mode lasing. The maximum temperature for CW lasing is 100 ° C. The longitudinal mode is multimode, however its full width at half maximum (FWHW) of the envelope is typically less than 3 nm. Dynamic characteristics appear