论文部分内容阅读
本文讨论制造铝栅N沟MOS电路具有增强和耗尽型器件时使用的5次掩模6次掩模(则多一道热氧化版)的制造方法,这种器件工作时,用单一的正5伏电源供电。离子注入分两步进行,高能硼注入用以掺杂表面,磷注入则形成耗尽型器件。注入硼是为了防止在高阻P型硅衬底上表面反型,并调节增强型器件的阈值。双电荷硼(B~(++))在210仟电子伏特的能量下穿透过9000埃厚的氧化层。这使注入离子分布的峰值刚好是在硅表面的内部。本文主要讨论用这方法制造的MOS/LSI电路增强和耗尽型器件的性能。
This article discusses a method of making six mask masks for five masks (and then one more thermal oxide mask) for use with enhanced and depleted devices in the fabrication of an aluminum gate N-channel MOS. This device operates with a single positive 5 Volt power supply. Ion implantation is carried out in two steps, high-energy boron implantation to dope the surface, and phosphorus injection to form the depletion-mode device. Boron is implanted to prevent inversion on the upper surface of the high-resistance P-type silicon substrate and to adjust the threshold of the enhancement device. Bipolar boron (B ~ (++)) penetrates a 9000 Angstrom thick oxide layer at 210 keV. This allows the peak of the implanted ions to be exactly inside the silicon surface. This article focuses on the performance of MOS / LSI circuit enhancement and depletion mode devices fabricated using this method.