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本工作采用先进的全离子注入低温工艺,研制成八个高水平4000系列小规模CMOS/SOS集成电路品种,它们是SC_(4001)、SC_(4002)、SC_(4011)、SC_(4012)、SC_(4013)、SC_(4030)、SC_(4066)及SC_(4069)。这些电路除了电学参数满足相应体硅CMOS电路以外,还具有优良的抗辐照特性,其抗γ总剂量达1×10~7rad(Si),抗γ瞬态剂量率达5×10~(10)rad(Si)/s以上。 本文简要介绍CMOS/SOS器件抗γ总剂量辐照及抗γ瞬态辐照的基本考虑以及辐照实验的结果。
This work uses advanced all-ion implantation low-temperature process to develop eight high-level 4000 series of small-scale CMOS / SOS integrated circuit products, which are SC_ (4001), SC_ (4002), SC_ (4011), SC_ (4012) SC_ (4013), SC_ (4030), SC_ (4066) and SC_ (4069). In addition to the electrical parameters meet the corresponding bulk silicon CMOS circuit, these circuits also have excellent anti-radiation characteristics, the total dose of anti-γ up to 1 × 10 ~ 7rad (Si), anti-γ transient dose rate of 5 × 10 ~ (10 ) rad (Si) / s or more. This article briefly introduces the basic considerations of total γ-dose radiation and anti-γ transient radiation in CMOS / SOS devices and the results of irradiation experiments.