东芝面向超低功率微控制器(MCU)开发采用新工作原理的隧穿场效应晶体管(TFET)。该工作原理已经被应用到使用CMOS平台兼容工艺的两种不同的TFET开发中。通过将每种TFET应用到一些电路块中,可实现大幅降低MCU的功耗。9月9日和10日,东芝在日本筑波举办的2014年固态元件与材料(SSDM) Toshiba Develops Tunneling Field Effect Transistors (TFETs) with New Operating Principles for Very Low Power Microcontrollers (MCUs). This principle of operation has been applied to the development of two different TFETs using CMOS platform compatible processes. By applying each TFET to some circuit blocks, the power consumption of the MCU can be drastically reduced. September 9 and 10, Toshiba held in Tsukuba, Japan 2014 Solid State Components and Materials (SSDM)