The insertion losses of silicon oxynitride (SiON) waveguides have been measured in the 1550 nm wavelength region.The waveguide structure consisted of a 2.0μm SiON waveguide core with a refractive index of 1.50, a 0.5μm SiO2 uppercladding and a 5.0μm SiO2 lower cladding with a refractive index of 1.45. It was found that the wavelength-dependentinsertion losses of the waveguide were greatly reduced by annealing, and the loss was decreased more than 5.7 dB/cm at1550 nm after annealing at optimum conditions. The former was attributed to the reduction of the absorption caused by N-H and Si-H vibration modes, and the latter was due to the improvement of the interface roughness and homogeneity in the waveguides after annealing.