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半绝缘InP单晶离子注入硅后,进行了包封与无包封热退火研究。结果表明:用SiO_2膜作包封层的注Si~+InP样品在热退火温度达580℃时开始龟裂,而退火温度高达750℃才能开始激活。用磷硅玻璃作盖片的无包封热退火,在720～750℃范围样品表面光亮,激活率为30～95％,霍耳迁移率最高可达1900cm~2/V·s,薄层电阻最低可达203Ω/□。实验中采用高纯氩气作为保护气体,比传统使用的氢气安全、简便。
After semi-insulating InP single crystal ion implantation into silicon, the encapsulation and unpackaged thermal annealing were studied. The results show that Si @ + InP samples with SiO_2 film as the encapsulation layer begin to crack when the thermal annealing temperature reaches 580 ℃, and the annealing temperature can reach 750 ℃ to start the activation. The surface of the sample was bright at 720-750 ℃, the activation rate was 30-95%, and the Hall mobility was up to 1900cm 2 / V · s. The sheet resistance The lowest up to 203Ω / □. High-purity argon gas is used as the shielding gas in the experiment, which is safer and easier than the hydrogen gas used conventionally.