论文部分内容阅读
在S和X波段的频率范围内,砷化镓肖特基势垒栅场效应功率晶体管正与行波管相竞争。普莱赛公司宣称,这种功率器件比行波管更可靠,效率更高,电源更简单。这些特点对于卫星通信和相控阵雷达这样一些应用来说是特别吸引人的。对于卫星系统,在典型情况下,约需1瓦的功率就行了。制成的器件在3千兆赫下,输出功率大于1瓦,增益大于8分贝,效率为30％,即将投入商品生产。预计将达到5千兆赫,并在8～12千兆赫可以达到可比较的性能。但是在X波段以上,恐怕还不能与行波管相争。设计了两种几何形状的器件,一种是梳状的源和漏,其间为曲折状栅,片子上共有四个单元,由键合互连,源和漏接触是铟、锗和金,用铝作肖特基栅。另一种是菱形的
The gallium arsenide Schottky barrier gate-field effect power transistor is competing with traveling-wave tubes over the frequency range of the S and X bands. Plesi 赛 claims, this kind of power device is more reliable than the traveling wave tube, the efficiency is higher, the power source is simpler. These features are particularly appealing for such applications as satellite communications and phased array radars. For satellite systems, in the typical case, about 1 watt of power on the line. Devices made at 3 gigahertz, the output power is greater than 1 watt, the gain is greater than 8 dB, the efficiency of 30%, about to put into production. It is estimated to reach 5 gigahertz and achieve comparable performance at 8-12 gigahertz. However, in the X band above, I am afraid can not compete with the traveling wave tube. Two geometrically shaped devices are designed, one being a comb-like source and drain with a zig-zag grid in between. There are four cells on the chip, interconnected by a bond, the source and drain contacts being indium, germanium, and gold Aluminum as Schottky barrier. The other is diamond-shaped