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用反应溅射法在升华了的硫和氩的混合气氛中,制成了与化学组分比接近的Cd5(硫化镉)薄膜。其特性十分依赖于溅射条件,即溅射速度、升华温度和氩气压等。在温度为125℃的硫气氛中溅射的CdS薄膜,暗电阻率为2×10~(10)欧·厘米。把CdTe(碲化镉)蒸发在CdS溅射膜上,制成了CdS-CdTe异质结,并观察了这些结的整流特性和可见光范围内的光谱响应。
In the mixed atmosphere of sublimated sulfur and argon, a Cd5 (cadmium sulfide) film having a chemical composition ratio of about 5 was formed by a reactive sputtering method. Its properties are very dependent on the sputtering conditions, namely sputtering speed, sublimation temperature and argon pressure. CdS thin film sputtered in a sulfur atmosphere at a temperature of 125 ° C had a dark resistivity of 2 × 10 10 ohm · cm. CdTe (cadmium telluride) was evaporated on a CdS sputtered film to produce CdS-CdTe heterojunctions and the rectification characteristics of these junctions and the spectral response in the visible range were observed.