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为了适应光纤通讯的发展,上海市科委组织了上海交通大学、上海冶金所和上海冶炼厂联合研制长波长探测器——锗雪崩二极管(Ge-APD),上海冶炼厂提供锗单晶材料。锗雪崩二极管对锗单晶材料的要求是高纯度、低补偿和高完整性的结构。该厂采用了“分次提纯”法来提高单晶原材料的纯度,并采取措施,严格防止拉晶过程中的杂质沾污,以保证单晶的纯度及低补偿度,通过改革拉晶工艺条件及采用无位错工艺提高了锗单晶晶体结构的完整性,使材料达到雪崩二极管的技术要求,获市科技新产品三等奖。
In order to adapt to the development of optical fiber communication, Shanghai Science and Technology Commission organized Shanghai Ge-jing University, Shanghai Metallurgical Institute and Shanghai Smelter jointly developed a long wavelength detector - germanium avalanche diode (Ge-APD), Shanghai Smelter to provide germanium single crystal material. Germanium avalanche diode germanium single crystal material requirements of high purity, low compensation and high integrity of the structure. The plant adopted the “fractional purification” method to improve the purity of single crystal raw materials and take measures to strictly prevent the pulling process of impurity contamination in order to ensure the purity of single crystal and low compensation degree, through the reform of the crystal pulling process conditions And the use of dislocation-free technology to improve the crystal structure of germanium single crystal integrity of the material to achieve the technical requirements of the avalanche diode, won the third prize of science and technology of new products.