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采用高温固相法合成Sr_(0.97)Eu_(0.03)Si_2O_2N_2和Sr_(0.37)Ba_(0.60)Eu_(0.03)Si_2O_2N_2荧光粉,通过X射线衍射、激发光谱、发射光谱及转换后LED器件的性能等研究了荧光粉的结构、发光性能和稳定性。结果表明:在稀土Eu2+掺杂的Sr Si2O2N2荧光粉中,当部分Sr2+被Ba2+取代后,形成三斜晶系的Sr_(0.37)Ba_(0.60)Eu_(0.03)Si_2O_2N_2荧光粉,激发和发射光谱红移,在近紫外-蓝光区具有更高的激发效率。将2种荧光粉与Ga(N)In芯片封装,Sr0.37Ba0.60Eu0.03Si2O2N2荧光粉转换的白光LED器件,在光效、显色指数和光效维持特性方面均高于Sr_(0.97)Eu_(0.03)Si_2O_2N_2转换的LED器件。
The Sr_ (0.97) Eu_ (0.03) Si_2O_2N_2 and Sr_ (0.37) Ba_ (0.60) Eu_ (0.03) Si_2O_2N_2 phosphors were synthesized by solid-state reaction at high temperature. The properties of XRD, excitation spectra, The structure, luminescent properties and stability of phosphors were studied. The results show that the Sr_ (0.37) Ba_ (0.60) Eu_ (0.03) Si_2O_2N_2 phosphor with triclinic structure is formed when part of Sr2 + is substituted by Ba2 + in rare earth Eu2 + doped SrSi2O2N2 phosphor. The excitation and emission spectra of red In the near-UV - blue region has a higher excitation efficiency. The white LED devices with two kinds of phosphors and Ga (N) In chip packages and Sr0.37Ba0.60Eu0.03Si2O2N2 phosphor conversion are higher than those of Sr_ (0.97) Eu_ (1) in terms of luminous efficiency, color rendering index and luminous efficacy. 0.03) Si_2O_2N_2 conversion of LED devices.