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高阻P型硅在热氧化过程中,往往在表面会出现n型。同样,高阻n型硅热氧化后也可具有P型表面。这种表面反型现象一般称作沟道效应。硅表面形成沟道时,在沟道与硅片之间存在着一个平行于表面的p-n结。一方面,它严重影响器件的性能,使漏电流大大增加;另一方面,它毕竟也是一个p-n结,故同样具有整流特性及光敏性。由于反型层极薄,因此,本文提出用反型层工艺来制作光电元件,这种元件对蓝光特别灵敏,光谱响应峰值可以从800mμ移至500mμ,非常适用于照相机电子快门、曝光表、照度计、比色计及可见光区域的分光光度计;并从沟道形成的一般机理着手,提出这种器件的结构、工艺及对实险结果的讨论。
High-resistance P-type silicon in the thermal oxidation process, often appear in the surface of n-type. Similarly, high-resistance n-type silicon thermal oxidation may also have a P-type surface. This surface inversion is commonly referred to as channeling. When forming a channel on a silicon surface, there is a p-n junction parallel to the surface between the channel and the silicon. On the one hand, it seriously affects the performance of the device and greatly increases the leakage current; on the other hand, it is also a p-n junction after all, so it also has the rectifying characteristics and photosensitivity. Due to the extremely thin inversion layer, this paper proposes to use the inversion layer process to fabricate the optoelectronic element. This element is particularly sensitive to blue light and its spectral response peak can be moved from 800mμ to 500mμ, which is very suitable for the application of electronic shutter, exposure meter, illuminance Meter, colorimeter and visible light spectrophotometer; and proceeding from the general mechanism of channel formation, put forward the structure of this device, process and the discussion of the real risk results.