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本文对探测和表征现代硅半导体器件工艺中使用的典型介电薄膜局部缺陷的各种分析方法的可能性及局限性进行了综述和比较。具有特殊性能的介质和绝缘材料,包括热生长二氧化硅和气相淀积二氧化硅、硅酸盐玻璃、氮化硅、铝氧化物,以及从几百埃到几微米厚的复合硅酸盐。详细讨论的分析方法有:光反差显微、扫描电子显微、白热介电击穿、选择性化学腐蚀、电解染色、液晶技术、电子探针微量分析和离子探针质谱分析等。还略述了几种附加方法,特别强调了这些方法最近取得的新的进展。讨论了实际运用.列举典型例子,并指出了今后的发展动向。
This article reviews and compares the possibilities and limitations of various analytical methods used to detect and characterize localized defects in typical dielectric films used in the fabrication of modern silicon semiconductor devices. Dielectric and insulating materials with special properties include thermally grown and vapor-deposited silicas, silicate glasses, silicon nitride, aluminum oxides, and composite silicates from a few hundred angstroms to several microns thick . Analytical methods discussed in detail are: light contrast microscopy, scanning electron microscopy, thermal dielectric breakdown, selective chemical etching, electrolytic staining, liquid crystal technology, electronic probe microanalysis and ion probe mass spectrometry. A few additional methods are also outlined, with particular emphasis on the recent progress made by these methods. Discussed the practical application. Citing typical examples, and pointed out the future development trend.