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测量了掺锗ＣＺＳｉ中锗的纵向分布形式，发现硅中锗的分布是头部低尾部高，其有效分凝系数Ｋｅ≈０．６６±０．０１．
The longitudinal distribution of germanium in germanium-doped CZSi was measured and the distribution of germanium in silicon was found to be high at the lower tail of the head with an effective segregation coefficient Ke≈0.66 ± 0.01.