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引言近代技术对某些物貭的純度提出了很高的要求。如所周知,半导体的电导率明显地随着极微量杂质的存在而改变。例如极純的锗内杂质的含量不应超过10~(-7)％,硒中不应超过10~(-6)—10~(-8)％等。在原子能动力方面也需要很純的金属。这样的一些元素及其盐类的产品的检验应当拥有能測定如此低浓度(至10~(-9)％)的分析方法,在有关的分析化学的文献中对此已有所闡明。測定微量的一些杂质的方法已有过研究和评述,下面我們将概括地予以說明。当称取1克样品时,10~(-6)％的杂质共计为10~(-8)克。令杂质的原子量平均为100时,则此量相当于10~(-10)克
Introduction Modern technology places high demands on the purity of certain objects. As is known, the conductivity of a semiconductor obviously changes with the presence of a very small amount of impurities. For example, extremely pure germanium impurity content should not exceed 10 ~ (-7)%, selenium should not exceed 10 ~ (-6) -10 ~ (-8)% and so on. It also needs very pure metal in terms of atomic power. Inspection of such elements and their salts products should have an analytical method capable of determining such a low concentration (up to 10 -9%) as has been illustrated in the relevant analytical chemistry literature. Methods for the determination of trace amounts of impurities have been studied and reviewed, as we shall summarize them below. When weighed 1 gram of sample, the 10 -6% impurities totaled 10-8 grams. When the average atomic weight of impurities is 100, this amount corresponds to 10 - (10) g