采用催化热解法,以二茂铁和二甲苯分别作为催化剂和碳源,在不同H2流量下,直接在硅基底上生长定向碳纳米管阵列。采用扫描电子显微镜(SEM)、透射电子显微镜(TEM)和拉曼光谱(Raman)对样品进行观察和表征,并研究了H2流量对定向碳纳米管生长的影响和碳纳米管定向生长的机理。结果表明:H2在反应过程中起刻蚀作用,H2流量为60cm3/min时,生长的碳纳米管定向性最好。 The catalytic pyrolysis method, using ferrocene and xylene as a catalyst and a carbon source, respectively, at different H2 flow rate, directly on the silicon substrate grown aligned carbon nanotube arrays. The samples were observed and characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman spectroscopy (Raman). The effects of H2 flux on the growth of oriented carbon nanotubes and the mechanism of directional growth of carbon nanotubes were also studied. The results show that H2 plays the role of etching during the reaction. When the flow rate of H2 is 60cm3 / min, the orientation of carbon nanotubes is the best.