制成一批本征α－Ｓｉ：Ｈ的金属－绝缘体－半导体（ＭＩＳ）结构；用高精密差分电容谱仪测量了这种结构在５０℃时的电容、电导谱；通过修正获得了由隙态决定的电导并求得了隙态俘获电子的时间常数及截面。 A series of intrinsic metal-insulator-semiconductor (MIS) structures of α-Si: H were fabricated. The capacitance and conductance spectra of this structure at 50 ℃ were measured by high-precision differential capacitance spectroscopy. The conductance is determined and the time constant and cross section of the trapped electrons are obtained.