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第一代红外热象仪采用光机扫描结构,探测元件基本上是200元以下的线列。美国的组件是60元,120元,180元。这些组件已成功地应用在军事热象观察仪器中,这种系统采取并联扫描,提供8～12μm光谱范围内实时红外成象,组件通常冷却到77K,峰值探测率D_(λP)受限于入射背景光子通量的起伏,范围一般在2×10~(10)cmHz~(1/2)W~(-1)到8×10~(10)cmHz~(1/2)W~(-1)以内。此外这些组件亦用于AN/AAD—5机载红外侦察设备,红外幼畜(Maverick)导弹寻的器(使用16元HgCdTe)和串扫实时热象系统。第二代热象仪则是要实现所谓凝视成象。这种热象仪不要机械扫描结构,探测元件采用镶嵌焦面列阵,读出部分采用硅电荷偶合器件或硅MOS开关二极管列阵。英国人在线列元件和焦面列阵元件之间,还发展了一种过渡形式的红外元件——SPRITE。七十年代初期随CCD的问世,开始了红外—CCD焦面列阵的研究。而使用SPRITE。这种红外元件制造热象仪,以及用硅MOS开关二极管列阵作信号处理部分制造热象仪,则是于1981年才见到公开报道~[1,2]。下面就以近几年见到的报道,综述一下HgCdTe多元探测器的发展情况,并提出关于对策的意见。仅供参考。
The first generation infrared thermal imager using optical scanning structure, detection components are basically 200 lines below the line. US components are 60 yuan, 120 yuan, 180 yuan. These modules have been successfully used in military thermal observation equipment. The system uses parallel scanning to provide real-time infrared imaging in the 8-12μm spectral range. The module is usually cooled down to 77K. The peak detection rate D_ (λP) is limited by incident The fluctuations of background photon flux are usually in the range of 2 × 10 ~ (10) cmHz ~ (1/2) W ~ (-1) to 8 × 10 ~ (10) cmHz ~ (1/2) W ~ ). In addition, these components are also used in AN / AAD-5 airborne infrared reconnaissance equipment, infrared Maverick missile seekers (using $ 16 HgCdTe) and tandem real-time thermal imaging systems. The second generation of thermal imagery is to achieve the so-called staring imaging. This thermal imager does not require mechanical scanning of the structure, the detection element uses a mosaic focal plane array, the readout part uses silicon charge coupled devices or silicon MOS switching diode arrays. British online column components and focal plane array elements, but also the development of a transitional form of infrared components - SPRITE. The early seventies with the advent of CCD, began the research of infrared CCD focal plane array. And use SPRITE. The production of thermal imagers by such infrared devices and the fabrication of thermal imagers by using silicon MOS switching diode arrays as signal processing components were not publicized until 1981 [1,2]. Here to see the reports in recent years, review the development of HgCdTe multivariate detectors, and put forward opinions on countermeasures. for reference only.