【摘 要】
：
利用准二维方法求解二维泊松方程,建立了锗硅源漏单轴应变PMOS阈值电压的二维解析模型,理论计算结果和实验报道的结果能很好吻合.研究了不同沟道长度和漏压情况下的沟道表面
【基金项目】
：
中央高校基本科研业务费专项资金资助项目;国家自然科学基金
论文部分内容阅读
利用准二维方法求解二维泊松方程,建立了锗硅源漏单轴应变PMOS阈值电压的二维解析模型,理论计算结果和实验报道的结果能很好吻合.研究了不同沟道长度和漏压情况下的沟道表面势,分析了沟道长度、漏压及锗硅源漏中锗摩尔组分等参数对阈值电压的影响.利用TCAD工具进行仿真模拟,结果表明,沟道长度和漏压是单轴应变PMOS阈值电压漂移的主要影响因素,而锗摩尔组分在一定成分范围内影响较小.
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