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The diffusion of Zn into GaAs at low temperature has been investigated.The experiments arecarried out in an evacuated and sealed quartz ampoule using ZnAs_2 as the source of Zn.The relation among the junction depth(X_j),the time(t)and the temperature(T)of diffusion hasbeen investigated.It is found that the sheet resistance(R_s)of diffusion layer increases as X_j decreases.The surface concentration(C_s)decreases as 1/T increases,and mobility(μ)decreases as C_s increasesThe C_s versus 1/(X_j,R_s)are plotted,the results are that C_s increases as 1/(X_j,R_s)increases.This is asimple method for determining C_s of the multiple GaAs/GaAlAs epitaxial layer.The mechanism ofZn diffusion in GaAs and InP is discussed.This process has been applied to fabricate GaAs/GaAlAsdouble heterojunction light emitting diodes and an output power of 2—4mW is obtained,the seriesresistance is 3—5Ω.
The diffusion of Zn into GaAs at low temperature has been investigated. The experiments are carried out in an evacuated and sealed quartz ampoule using ZnAs_2 as the source of Zn. The relation among the junction depth (X_j), the time (t) and the temperature (T) of diffusion hasbeen investigated. It is found that the sheet resistance (R_s) of diffusion layer increases as X_j decreases. The surface concentration (C_s) decreases as 1 / T increases, and mobility 1 / (X_j, R_s) are plotted, the results are that C_s increases as 1 / (X_j, R_s) increases. This is asmple method for determining C_s of the multiple GaAs / GaAlAs epitaxial layer. The mechanism of Zn diffusion in GaAs and InP is discussed. This process has been applied to fabricate GaAs / GaAlAsdouble heterojunction light emitting diodes and an output power of 2-4mW is obtained, the seriesresistance is 3-5Ω.