ＮＥＣ在世界上首次开发了在多引脚、窄间距半导体器件的Ｉ/Ｏ端上与外部电路连接布线技术— 4 0 μｍ的超窄间距键合。近来 ,随着电子器件高性能、高集成化发展 ,为连接增多的芯片Ｉ/Ｏ端与外部电路窄焊点 (Ｐａｄ)间距的键合技术要求甚高。ＮＥＣ早期就采用ＴＡＢ技术开发了 For the first time in the world, NEC has developed an ultra-narrow pitch bonding of 40 μm on the I / O terminals of multi-pin, narrow-pitch semiconductor devices with external circuitry. Recently, with the development of high performance and high integration of electronic devices, the bonding technology for increasing the pitch of the narrow pads between the chip I / O terminal and the external circuit connected to the circuit is very high. NEC early developed using TAB technology