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利用本实验室生长的半绝缘衬底上的4H-SiC外延材料开展了SiC MESFET和MMIC的工艺技术研究。在实现SiC衬底减薄和通孔技术的基础上,采用微带技术以及全套的无源器件,设计并研制了国内第一片SiC微波功率MMIC。研制的SiC MMIC工作频段为S波段,在1.8~3.4GHz的频带内小信号增益大于12dB,漏电压为32V时带内脉冲输出功率超过5W。SiCMMIC小信号特性达到了设计预期,但输出功率低于设计值。这是由于受到MI M电容耐压能力的限制,SiC MMIC的工作电压比较低。
The technology research of SiC MESFET and MMIC was carried out by utilizing the 4H-SiC epitaxial material grown on the semi-insulating substrate of our laboratory. On the basis of SiC substrate thinning and via technology, the first SiC microwave power MMIC in China was designed and developed by using microstrip technology and a full set of passive components. The developed SiC MMIC operates in the S-band and has a small signal gain of more than 12 dB in the 1.8 to 3.4 GHz band. When the drain voltage is 32 V, the in-band pulse output power exceeds 5 W. SiCMMIC small signal characteristics to achieve the desired design, but the output power is lower than the design value. This is due to the limited ability of the MI M capacitor to withstand voltage and the operating voltage of the SiC MMIC is relatively low.