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采用光刻工艺和纳米引晶技术 ,在抛光的单晶 Si衬底上形成带有超细金刚石纳米粉的引晶图案 ,并利用引晶处与抛光 Si处金刚石成核密度的巨大差异 ,在光滑的 Si3N4 和 Mo衬底上实现金刚石薄膜的高选择性生长 .
Using photolithography and nano-seeding technology, the seeding pattern with ultra-fine diamond nano-powder is formed on the polished single-crystal Si substrate. By utilizing the great difference of diamond nucleation density at the place of seeding and polishing Si, Smooth Si3N4 and Mo substrates achieve high selective growth of diamond films.