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材料制备 用气体输运法在蓝宝石衬底上通过GaCl和NH_3反应而生成GaN。制得的“未渗杂”单晶一般为n型,电子浓度为10~(18)cm~(-3)数量级,迁移率约为130厘米~2伏~(-1)秒~(-1)。看来,施主是氮空位引起的,未渗杂的n型层生长3个小时后,能长成非常厚的GaNn型层。这样长时间生长,目的是为减小蓝宝石衬底和GaN之间的晶格失配引所起的应变。生长中间停顿几次,以便转动衬底,从而改变生长面上方的气流方向。在生
Material Preparation Gas transport method using GaCl and NH3 on the sapphire substrate to produce GaN. The prepared “un-doped” single crystal is n-type, the electron concentration is on the order of 10-18 cm -3, and the mobility is about 130-2 volt -1 ). It appears that the donor is caused by nitrogen vacancies and that the non-doped n-type layer grows to a very thick GaN-type layer after 3 hours of growth. This growth for a long time aims to reduce the strain caused by the lattice mismatch between the sapphire substrate and GaN. The pauses in the middle of growth allow the substrate to be rotated to change the direction of the airflow over the growth surface. Alive