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化学机械平坦化(CMP)过程中,抛光液的化学作用对平坦化效果起着不可替代的作用。介绍了碱性抛光液中氧化剂(H2O2)对铜布线CMP的作用:H2O2对铜的强氧化性可以将铜氧化为离子状态,然后在螯合剂的螯合作用下快速去除铜膜;H2O2对铜的钝化作用可以保护凹处铜膜不被快速去除,从而有效降低高低差。此外,还研究了碱性抛光液中不同H2O2浓度对铜的静态腐蚀速率、动态去除速率及铜布线平坦化结果的影响。研究表明:抛光液对铜的静态腐蚀速率随H2O2浓度的增大逐渐降低然后趋于饱和;铜的动态去除速率随H2O2浓度的增大而逐渐降低;抛光液的平坦化能力随H2O2浓度的增大逐渐增强再趋于稳定。
Chemical mechanical planarization (CMP) process, the chemical effect of the polishing liquid on the flattening effect plays an irreplaceable role. The effect of oxidizing agent (H2O2) in basic polishing solution on copper CMP is introduced. The strong oxidizing property of H2O2 to copper oxidizes copper to ionic state, and then the copper film can be quickly removed by chelating chelating agent. The effect of H2O2 on copper Passivation can protect the copper film can not be quickly removed, thereby effectively reducing the height difference. In addition, the effects of different concentrations of H2O2 in alkaline polishing solution on the static corrosion rate of copper, dynamic removal rate and planarization of copper wiring were also studied. The results show that the static corrosion rate of copper on polishing solution decreases gradually with the increase of H2O2 concentration and then tends to be saturated. The dynamic removal rate of copper decreases with the increase of H2O2 concentration. The planarization ability of polishing solution increases with the increase of H2O2 concentration Large gradually increased and then stabilized.