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综述了电荷耦合器件(CCD)在空间环境和核辐射领域中的辐射效应研究进展;阐述了不同粒子辐照CCD的损伤效应机理及暗电流、平带电压和电荷转移效率等敏感参数的退化机制;从制造工艺、器件结构、工作模式等方面介绍了CCD抗辐射加固技术;分析了CCD辐射效应研究的发展趋势。
The research progress on the radiation effects of charge-coupled device (CCD) in the space environment and nuclear radiation field is reviewed. The damage mechanism and the degradation mechanism of dark-current, flat-band voltage and charge transfer efficiency are described The technique of radiation-proofing CCD was introduced from the aspects of manufacturing technology, device structure and working mode. The development trend of CCD radiation effect was also analyzed.