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研制成功了一种无微空气桥的亚微米InP基异质结双极晶体管(HBT).发展了小于100nm的发射极侧向腐蚀工艺,实现了亚微米的InP基HBT.发射极宽度的减小有效提高了频率特性,发射极面积为0.8μm×15μm的HBT的电流增益截止频率达到了238GHz.发展了基极-集电极的侧向过腐蚀工艺,有效减小了结面积,提高了最大振荡频率.Kirk电流密度达到了3.1mA/μm2.据我们所知,电流增益截止频率是目前国内三端器件中最高的,Kirk电流密度是国内报道的HBT中最高的.这对于HBT器件在超高速电路中的应用具有十分重要的意义.
A submicron InP-based heterojunction bipolar transistor (HBT) with no micro-air bridge was successfully developed.The emitter side-etching process with less than 100 nm was developed to achieve a sub-micron InP-based HBT with a reduced emitter width Small and effective to improve the frequency characteristics of the emitter area of 0.8μm × 15μm HBT current gain cut-off frequency reached 238GHz. The development of the base - collector lateral over-etching process, effectively reducing the junction area and increase the maximum oscillation Kirk current density reached 3.1mA / μm2. To our knowledge, the current gain cut-off frequency is currently the highest three-terminal devices, Kirk current density is the highest reported in the country HBT.This HBT devices in the ultra-high speed The application of the circuit is of great significance.